Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
نویسندگان
چکیده
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. current-voltage characterization diodes showed that predominant is thermionic-field emission mechanism. On other hand, bias characteristics could not be described by unique In fact, under moderate bias, implantation-induced damage responsible for temperature increase leakage current, while pure field mechanism approached increasing. potential application metal/4H-SiC contacts layers real devices are discussed.
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ژورنال
عنوان ژورنال: Journal of Physics D
سال: 2021
ISSN: ['1361-6463', '0022-3727']
DOI: https://doi.org/10.1088/1361-6463/ac13f3